Optimization of hybridized InAsSb/InGaSb semiconductor topological materials

Generating large topologically protected surface currents using conventional III–V infrared materials such as InAsSb/InGaSbAs quantum wells (QWs) and superlattices (SLs) has been important. In materials, topological states can be formed at the edge by hybridizing ordinary electronic band structures. However, achieving out of these is still difficult due to low emission high carrier defects. this work, we present two hybridized structures: one for 6.22 Å metamorphic QWs other 6.10 pseudomorphic SLs. Both structures are tailored same hybridization gap (Δ) ∼60 meV optimized minimum crystal While QW grown on buffers generates a significant amount mismatch-related defects, SL lattice-matched produces an excellent crystalline-quality. Quasiparticle interference mapping calculations sample show good agreement structure.